Abstract
The dissolution of silicon into germanium melts has been investigated for application to solution crystal growth. Small diameter samples were processed to weaken flow structure in the melt making the transport mechanism diffusion dominated. 8mm diameter samples were processed at three different temperatures. The temperature dependence of the dissolution rate of silicon was found to be not measurably significant in the experiments presented here. The orientation of the sample, with respect to gravity, had a profound effect on the dissolution rate. A small number of 4mm diameter samples were also processed and the same effects were apparent.
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