Abstract
A new method for the analysis of diffusion length measurements by the Surface Photovoltage (SPV) method is presented. It takes into account the effect of the reflection of light from the back contact in thin layers and the effect of a finite bandwidth of the used interference filters. The model was found to agree with experiments on thin amorphous silicon (a-Si:H) layers. It is shown that in the region were these effects are negligible this method is equivalent to the standard method.
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