Abstract
The new Steady State Photocarrier Grating technique for minority carrier diffusion length measurements is briefly reviewed. The uncertainty about the magnitude of the surface recombination velocity is shown to introduce an error of less than 5% in the results. The ratio between the electron and hole drift mobilities in several samples of a-Si:H is determined by a simultaneous measurement of photoconductivity and the diffusion length on the same sample and it is found that there is no correlation high values of the photoconductivity and high values of minority carrier diffusion length.
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