Abstract
The thermal surface oxidation of GaAs in dry O 2 and in ambient air has been investigated in the temperature range 400–530°C. The studies were carried out using clean, polished (111) substrates. It was found that GaAs single-crystal wafers oxidized parabolically in dry O 2 at temperatures from 400 to 450°C. Linear growth occurred at temperatures from 480 to 530°C both in dry O 2 and in ambient air. Wagner and Grimley-Trapnell models of metal oxidation are used to identify the growth kinetics. The rate constants k p (parabolic) and k 1 (linear) are temperature dependent and satisfy the Arrhenius relationships. The activation enthalpies H p and H 1 are evaluated.
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