Abstract

Solid-state photon-enhanced thermionic emission (PETE) solar energy converters are new devices that can directly convert solar energy into electrical power at elevated temperatures. This study proposes a new solid-state PETE device structure with a p-type doped semiconductor as the absorber. A model based on a 1D steady-state continuity equation is presented to simulate the diffusion and emission of photogenerated carriers and to calculate the efficiencies. This model can evaluate the effect of device structure and material parameters on performance and efficiency. Calculation results show that the new device is more efficient compared with the original device. A longer electron diffusion length is favourable for enhancing efficiency. Moreover, the optimal absorber thickness is predicted. Our analyses also show that the front interface strongly affects conversion efficiency, which emphasises the need to reduce interface recombination losses. The results of this study may serve as bases for the optimum design of practical solid-state PETE devices.

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