Diffusion-doped Cr:CdSe single crystals for mid-IR lasers

E.M Gavrishchuk,S.A Rodin,S.V Kurashkin,K.N Firsov,O.V Martynova,N.V Zhavoronkov,D.V Kapkin,V.P Chegnov,N.G Zakharov,I.G Kononov,S.V Podlesnykh,A.A Sirotkin,O.V Timofeev

doi:10.1016/j.optmat.2022.112372

Abstract

The paper describes a method of fabrication of Cr2+:CdSe active elements by high-temperature diffusion. On test samples, repetitively pulsed laser generation was obtained at a wavelength of about 2.65 μm with an efficiency of up to 69% in terms of absorbed power.

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