Abstract
a-Axis-oriented BaSi2 epitaxial films were grown on Si(111) by molecular beam epitaxy, and the diffusion coefficients of Sb and As were evaluated using secondary ion mass spectrometry (SIMS) with Cs+ ions. The SIMS profiles of these atoms were reproduced well by considering both the lattice and grain boundary (GB) diffusions. The temperature dependence of lattice and GB diffusion coefficients was determined from the SIMS profiles, and their activation energies were found to be 0.77 and 0.65 eV for Sb, and 0.91 and 0.88 eV for As, respectively.
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