Abstract
The longitudinal and transverse diffusion coefficient of hot electrons in GaAs at a lattice temperature of 300 K has been calculated by the Monte Carlo technique. The calculations showed that drift velocity and diffusion coefficient of hot electrons in GaAs can be fitted to available experimental data if the three-valley Γ- L- X model is used. The estimates of some parameter values of GaAs conduction band have been made.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
