Abstract
We implanted B ions in a 110-nm-thick HfO/sub 2/ layer, subjected the substrates to various thermal processes, and evaluated the diffusion coefficient by comparing experimental and numerical data. We found that the diffusion coefficient of B in HfO/sub 2/ is higher than that in SiO/sub 2/ by about four orders and almost the same as that in Si. Therefore, the penetration of B through this layer can be expected to be significant, making the use of a cover layer indispensable for p/sup +/ polycrystalline silicon gate devices.
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