Abstract
ufonThe ∼1.35 eV emission-intensity profiles are measured for high-temperature annealed GaAs. Diffusion coefficient D for this center is determined by a parametrization using an emission-intensity profile formula. This formula is derived assuming the emission-center profile to be a complementary error function and considering the absorption depth for an excitation light. Temperature dependence of D is expressed by D=3.38×10−4 exp(−2.14/kT), where D is in cm2s−1 and kT in electron volts. This result suggests that the ∼1.35 eV emission may be assigned to the center related to a native defect such as Ga vacancy, rather than to a Cu atom.ufoff
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