Abstract
ABSTRACTThe efficiency of a tantalum nitride interlayer as a diffusion barrier for CeFe4Sb12 thermoelectric material against electrode copper material has been investigated. The thermal stability of CeFe4Sb12/TaN/Cu stackings has been investigated after annealing at 600°C from a microstructural study. CeFe4Sb12 and Cu appear to chemically react through the formation of CeCu2 and Cu2Sb phases whereas no reaction is observed for CeFe4Sb12 with TaN. This study showed that the TaN interlayer cannot inhibit the diffusion of Sb from the skutterudite substrate to the copper electrode but prevents the diffusion of Ce and consequently the formation of the CeCu2 phase.
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