Abstract
Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputtering of tungsten in Ar-N₂ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When La_(0.67)Sr_(0.33)MnO₃ was coated on the W-C-N/Si substrate, coercivity (Hc) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.
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