Abstract
We investigated the diffusion barrier properties of an atomic-layer-deposited 12-nm-thick iridium (Ir) thin film as functions of the thermal treatment temperature. Up to a temperature of 500 °C, the Ir thin film maintained its initial configuration, preventing the penetration of the Cu layer into Si through the Ir layer. The thermal stability of the Ir layer up to 500 °C was confirmed by using high resolution transmission electron microscopy, Auger electron microscopy, and X-ray diffraction. In contrast, when the Ir layer was thermally annealed at 600 °C, copper silicide was formed, and interdiffusion of Cu and Ir was observed.
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