Diffusion and solubility of gold in silicon

Abstract

By means of neutron activation analysis and mechanical sectioning, diffusion and solubility of gold in silicon were investigated from 1371 K to 1073 K and from 1573 K to 1073 K, respectively. The results confirm that in Si, Au diffuses via the so-called kick-out mechanism and that, at least above 1320 K, self-diffusion takes place via an interstitialcy mechanism. Within the framework of the kick-out model from the Au diffusion and solubility data the interstitialcy contribution DSDI to the self-diffusion coefficient between 1371 K and 1073 K was calculated. In this indirect manner DSDI ≈ 2×10-20 cm2s-1 at 1073 K was found. Such a low value could not have been measured by any of the available direct techniques.