Abstract
Diffusion of interstitial iron in silicon could be observed on an atomic scale for the first time: Coulomb-excited $^{57}\mathrm{Fe}$ nuclei were implanted into high-purity n-type silicon M\"ossbauer spectra were recorded at temperatures between 300 and 850 K. The diffusional broadening of one spectral component identified as interstitial Fe could be observed. The isomer shift of interstitial Fe in Si was determined and the assumption that one single mechanism is governing the diffusion of Fe in Si between 300 and 1500 K is confirmed.
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