Abstract
In this work, we have observed for the first time that irreversible changes in the sheet hole concentration of the rapid thermally annealed Be-implanted GaAs samples occurred during subsequent heat treatments. The hole concentration is found to decrease with annealing time. Also, the rate of decrease in the hole concentration increases with increasing annealing temperature. By determining the initial rate of change of the carrier concentration during subsequent heat treatments, an activation energy of around 1 eV has been identified. It is concluded that the rate dependent process for this irreversible reaction is the out-diffusion of beryllium atoms. The electrical profiles of the Be implanted samples have also been modified during the annealing processes. These modifications in the electrical properties could lead to deleterious effects to transistor operations if Be is used as a dopant.
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