Abstract
Abstract The experimental Al concentration profiles formed on implantation of Al into SiC at room temperature with subsequent high-temperature annealing are analyzed. It is shown that, at high doses above the amorphization threshold, the profiles exhibit a number of specific features: a shift of the distribution maximum, accumulation of dopant nearby the surface, and formation of box-shaped profiles. To describe quantitatively the redistribution of Al in the SiC layers implanted with high doses, the segregation–diffusion model is suggested for the first time. The model takes into account segregation of dopant between the a - and c- phases during solid-state epitaxial crystallization followed by diffusion of dopant and their evaporation from the surface. The formation of box-shaped Al profiles as a result of rapid thermal annealing is attributed to the high diffusion coefficient of dopant in the highly damaged single-crystal and polycrystalline SiC layers in the recrystallized region, and to the suppression of the enhanced transient diffusion in the remaining single-crystal part of the implanted layer.
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