Abstract
Diffuse x-ray reflection from a multilayer with stepped interfaces has been investigated theoretically and experimentally. The statistical description of the stepped interfaces has been based on the theory of random processes. Diffuse x-ray scattering from those interfaces has been calculated using the distorted-wave Born approximation. The theory has been used for an analysis of the intensity distributions measured on a GaAs/(GaIn)As/GaAs/Ga(PAs) strained-layer superlattice grown on a miscut substrate. From the measurements, the mean size of the interface terraces and their orientations could be determined.
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