Diffraction Effects in X-Ray Fluorescence Analysis of Semiconductor-Grade Silicon and other Monocrystalline Materials

Abstract

The use of x-ray fluorescence spectrometry for the determination of doping elements in semiconductor materials appears to have been neglected, presumably because of its relative insensitivity, as compared to other techniques such as nuclear activation analysis and emission spectroscopy. However, in the case of silicon heavily doped with antimony or arsenic, it was felt that this insensitivity might not be a problem, especially in view of the low atomic number of the matrix and the availability of a vacuum x-ray spectrometer. Furthermore, x-ray fluorescence spectrometry would provide a very convenient means for the analysis of semiconductor silicon slices, cut from cylindrical rods of silicon, since specimens in this form would require little or no sample preparation.