Diffraction anomalous fine-structure study of strainedGa1−xInxAson GaAs(001)

Abstract

Diffraction anomalous fine-structure measurements performed at both the Ga and As {ital K} edges have determined the Ga-As bond length to be 2.442{plus_minus}0.005thinsp{Angstrom} in a buried, 213-{Angstrom}-thick Ga{sub 0.785}In{sub 0.215}As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.013{plus_minus}0.005thinsp{Angstrom} relative to the Ga-As bond length in bulk Ga{sub 1{minus}x}In{sub x}As of the same composition. Together with recent extended x-ray-absorption fine-structure measurements performed at the In {ital K} edge [Woicik {ital et al.}, Phys. Rev. Lett. {bold 79}, 5026 (1997)], excellent agreement is found with the uniform bond-length distortion model for strained-layer semiconductors on (001) substrates. {copyright} {ital 1998} {ital The American Physical Society}