Abstract
Temperature-dependence studies of GaAs electron-paramagnetic-resonance (EPR) quadruplet signals ascribed to arsenic antisite-related (${\mathrm{As}}_{\mathrm{Ga}{}^{+}}$) defects are reported. Observations were made before and after white-light illumination in as-grown, thermally treated, plastically deformed, and neutron-irradiated GaAs. Results show that there is a class of similar ${\mathrm{As}}_{\mathrm{Ga}{}^{+}}$-related defects that differ in the local stress fields they experience. Their corresponding EPR quadruplet spin-lattice-relaxation time decreases as local stress increases. The photoquenching property of ${\mathrm{As}}_{\mathrm{Ga}{}^{+}}$-related defects can be suppressed by high local stress fields. Furthermore, it is shown that EL2 is an ${\mathrm{As}}_{\mathrm{Ga}{}^{+}}$-related defect which is in the lowest stress field of this class of defects.
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