Abstract
Differential photovoltage measurements on Schottky-barrier diodes, formed by GaAs1-xPx crystals epitaxially-grown on GaAs substrate, indicate that the band-edge structure of GaAs1-xPx can be resolved as clearly as by other optical measurements. The direct transition edge and its spin-orbit split-off edge have been observed as sharp peaks in the whole composition range. For crystal composition x larger than 0.5, zero-phonon as well as momentum-conserving LA phonon-assisted free-exciton transitions have been observed with the same degree of sensitivity as a highly sensitive wavelength-modulated absorption technique. An additional structure, which is not yet identified, has been obtained just above the direct transition edge of GaAs1-xPx alloys in the direct-indirect crossover region (x≃0.45).
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