Differential photoionization cross section calculations for H 2S using the random phase approximation with L 2 basis functions

Abstract

The photoionization cross sections and asymmetry parameters of the four main valence ionization processes in H 2S, corresponding to the formation of respectively 2b 1, 5a 1, 2b 2 and 4a 1 holes, have been calculated in the random phase approximation (RPA). By resorting to a recently proposed computational procedure, based on the K-matrix technique, the RPA equations for the four coupled ionization channels have been projected on a basis set of L 2 functions and solved, at any excitation energy above the ionization threshold, in a way that allows to recover the electronic continuum degeneracy.