Abstract
Pairs of low-melting metal pellets were alloyed to n-type and p-type semi-insulating gallium arsenide. The I– Vcharacteristics of the resulting n-“ i”- n or p-“ i”- p devices under intense illumination were generally symmetrical about the origin and showed pronounced double saturation. In the spectral dependence of the photo-current under geometrical and electrical bias, wideband photo-response, narrowband response and sign-reversal of the photocurrent as a function of wavelength were observed. These response functions are explained as the differential output of two diodes connected back to back.
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