Differential methods for determination of deep-level parameters from recombination currents of p-n junctions

Abstract

Two techniques for determining the activation energies of centers that create deep levels in the space-charge region (SCR) of p-n junctions are developed on the basis of the Shockley-Read-Hall recombination model. The proposed techniques are based on a consideration of recombination currents in the SCR for a low injection level. The first technique involves a differential analysis of the reduced recombination rate ∂Rnp(U)/∂U and the second technique involves an analysis of the dependence Rnp2(U)/exp(qU/2kT). These techniques are used to analyze the current-voltage characteristics of gold-doped silicon p+-n diodes. The gold-related deep center activation energies obtained from the current-voltage characteristics are in good agreement with the available data in the literature.