Differential cross sections measurement of 28Si(p,p/γ)28Si and 29Si(p,p/γ)29Si reactions for PIGE applications

Abstract

Differential cross sections for gamma-ray emission from the 28Si(p,p/γ)28Si (Eγ=1779keV) and the 29Si(p,p/γ)29Si (Eγ=1273keV) nuclear reactions were measured in the energy range of 2.0–3.2MeV and 2.0–3.0MeV, respectively. The thin Si targets were prepared by evaporating natural SiO onto self-supporting Ag films. The gamma-rays and backscattered protons were detected simultaneously. An HPGe detector placed at an angle of 90° with respect to beam direction was employed to collect gamma-rays while an ion implanted Si detector placed at a scattering angle of 165° was used to detect backscattered protons. The great advantage of this work is that differential cross sections were obtained with a procedure irrespective of absolute value of the collected beam charge.