Abstract
1. Measurements of the differential capacitance showed that the space charge at the n-type gallium arsenideelectrolyte interface is formed by ionized donors (exhausted layer) within a broad region of potentials. In addition to the shallow donors, deep donors, the relaxation time of which in the investigated samples proved close to 1 msec, participate in the formation of the space charge. The potential of the planar zones of n-type gallium arsenide in a 1 N KOH solution is equal to −1.1±0.2 V. 2. The surface of gallium arsenide in aqueous solution carries ∼ one monolayer of adsorbed oxygen. In anodic oxidation in acid medium, a phase oxide is formed on the surface. The surface, reduced by cathodic polarization, is spontaneously oxidized when kept in aqueous solution. 3. An alkaline solution of K3Fe(CN)6 can be used as a mordant for revealing the boundaries of the blocks in polycrystalline gallium arsenide.
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