Abstract

The effect of mobile impurities on the dislocation dynamics under static and variable loading of crystals is calculated. It is shown that the dynamic aging of dislocations may produce a specific regime where dislocations are at rest upon static loading and move only under a growing stress. The dislocation mobility in this regime is athermal. The existence conditions for this regime are studied. The dependence of the dislocation path lengths in silicon on the stress pulse rise time that is observed in pulsed-load experiments is explained by the existence of this regime.

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