Abstract
Nowadays, wide bandgap(WBG) devices named SiC and GaN were widely used in power electronics system to improve power density and switching speed, meanwhile, electromagnetic interference(EMI) becomes a major drawback in power electronics system based on wide bandgap devices. This article discusses the influence of different parameter values in Gaussian function on EMI suppression, and a trade-off between EMI and losses was also discussed. Experiments were given in this article to analyze different parameter values effect on EMI reduction. This article can give guidance in the Gaussian function generated when used in active gate drive to reduce EMI.
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