Abstract
Copper–chromium alloy film and Cu–Cr bulk alloy were obtained using magnetron sputtering and vacuum smelting. Experimental results indicated that Cu–Cr bulk alloy and alloy films having different residual stress and atomic diffusion exhibit a significant difference in microstructure evolution behaviors after annealing. Numerous polyhedral Cu particles and dendritic Cr particles precipitated on the surface of annealed Cu–Cr alloy film and as–cast Cu–Cr bulk alloy, respectively. Cu particles were formed under the driving of energy and residual stress in the film. The effect of annealing temperature and Cr content on the size and quantity of Cu particles is discussed. Cr particles precipitated on the bulk alloy due to the low solid solubility of Cr in Cu, and the crystallinity of Cu grains promoted the diffusion of Cr atoms. The surface–enhanced Raman scattering (SERS) intensity of the Cu–14.6%Cr alloy film was obviously higher than that of the Cu–14.2%Cr bulk alloy. The particles/film composite structure possessed the appropriate particle number, surface roughness, and interstitial gap, as opposed to the bulk material, to effectively improve SERS enhancement.
Highlights
Copper (Cu) and copper alloys have gradually replaced aluminum (Al) as the interconnect materials widely used in various fields due to their excellent electrical conductivity and good electromigration resistance, as the size of integrated circuits decreases [1,2,3]
The diffraction peak intensity of Cu decreases gradually, and that of Cr increases a little as the annealing temperature is increased to 360 ◦ C, which indicate the further growth of the Cr particles and the diffusion of Cu atoms
The fundamental reason for the difference is due to the different preparation methods, which produce a significant difference in the residual stress and atomic diffusion during annealing [3,19]
Summary
Copper (Cu) and copper alloys have gradually replaced aluminum (Al) as the interconnect materials widely used in various fields due to their excellent electrical conductivity and good electromigration resistance, as the size of integrated circuits decreases [1,2,3]. It is well–known that composites with a nano–grained or nano–dispersed structure have good mechanical properties [4]. In this work, different effects of annealing on microstructure evolution and surface–enhanced Raman scattering (SERS) performance of Cu–Cr bulk alloy and alloy film deposited on polyimide were studied comparatively
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