Abstract
Domain engineering in relaxor-PT single crystals are attracting much attention both as unique physical phenomena and for potential applications in various devices. Here, the effect of initial domain state on domain switching process was explored. Different domain switching processes were illustrated by in situ observation, and the dynamic processes of domain switching were obtained by using optical current analysis. We found the samples with different initial domain states have different domain switching processes. For the sample with wide stripe 90° domain, the polarization reversal is driven by a-domain nucleation, 90° domain wall movement and c-domain growth. While, in the sample with thin stripe 90° domain, the nucleation and growth of c-domain prevailed. The influences of the initial domain state on the domain structure evolution are discussed by current analysis. Our findings are of great significance in regulating the domain switching process to meet the demand of different devices.
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