Abstract
The authors investigated the ferromagnetic property of dual acceptors (Be and Mn) doped GaAs∕AlGaAs heterostructures by means of numerical self-consistent field calculation. The dependence of the magnetic behavior on both acceptor doping concentrations and modes was studied in the two-dimensional hole gas system. The results show different dependences of Curie temperature on the concentration of each acceptor, which is attributed to different doping conditions and mechanisms. In addition, the ferromagnetic transition temperature can be increased by about 70K as a result of introducing Be δ-doping layer in AlGaAs barrier, as compared with that for Be bulk doping. The theoretical results indicate that double acceptor δ-doped ferromagnetic heterostructures have potential advantage in the realm of spintronic application.
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