Abstract
The paper deals with structural, optical, and electrical properties of a-SiC:H and a-SiC:H,F films prepared by rf sputtering of a silicon target in Ar+H2+CH4 and Ar+H2+CF4 gas mixtures, respectively. The comparison of the physical properties of the two different sets of the samples has been considered and the influence of hydrogen and/or fluorine incorporation is examined and discussed.
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