Abstract
Gallium nitride (GaN)-based thin films consist of its nanocrystals are grown on some metal-foils and a multi-crystalline silicon (Si) substrates. Their morphologies are compared with each other and the differences are discussed. Pillar-shaped nanocrystals are observed in the film grown on the multi-crystalline Si substrate while such structures are not observed in the films grown on the metal-foils when they are grown at higher growth temperatures. On the other hand, the morphologies of the films grown on the metal-foils approach to pillar-like structures by reducing the growth temperature. Band-edge emission is clearly observed in a cathodoluminescence spectrum of the film grown on the metal-foil at the reduced growth temperature.
Published Version
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