Abstract
It is shown that the threshold power density for laser-induced epitaxial recrystallization of 2100 Å thick amorphous silicon layers, produced by implantation of As, Sb, Sn and Ga ions, depends on the type and dose of dopants when the 1.06 μm radiation of a pulsed scanned Nd:YAG laser is used and that it is independent of these parameters for the 0.69 μm radiation of a single-pulse ruby laser.
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