Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Abstract

GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar+ sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.