Abstract
The effects of the selection of oxidant species, i.e. O2 or H2O on metal-oxide-semiconductor (MOS) interface properties on both 4H-SiC (0001) Si-face and (000-1) C-face were systematically investigated from the viewpoints of near-interface oxide microscopic structures, as well as those of electrical characteristics of MOS capacitors. As the possible origins of the significantly different MOS characteristics between dry and wet-oxidized interfaces, the differences in the strained structure of near-interface SiO2 were indicated. The important roles of both oxygen partial pressure in wet-oxidation ambient and oxidation temperature to control the MOS interface characteristics were also discussed.
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