Abstract
The effects of (NH4)2Sx treatments on the interface traps in Au/n-GaAs and Au/n-In0.5Ga0.5P Schottky contacts are investigated by deep level transient spectroscopy measurements. The interface trap concentration in Au/GaAs increases when the residual S overlayer is sublimated after (NH4)2Sx treatments. But the trap concentration decreases when the S overlayer is rinsed by de-ionized water. In Au/InGaP, the phosphorus vacancy-related interface traps are passivated effectively by the (NH4)2Sx treatment. These results are attributed to the fact that S bonds with As but not with P.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
