Difference in growth rates at {1 1 0} and {1 1 1} crystal/melt interfaces of silicon

Abstract

The growth rate of the crystal/melt interface along different crystallographic orientations was investigated in this work. In particular, we focused on the growth rate on the {110} plane because there have been few experimental comparisons of the growth rate on the {110} plane with that on other planes in the melt-growth process of Si. Crystal growth experiments in which two crystals with {110} and {111} planes were placed side-by-side were conducted, and their growth behavior was observed in situ to enable a direct comparison of their growth rates. The results clearly showed that the growth on the {110} plane was faster than that of the {111} plane. Differences in growth rates at each plane are discussed based on the growth mode.