Abstract
PWM power cycling, which has complex control strategies and high testing costs, received a lot of attention in recent years due to the test conditions are closer to the application of power modules than standard DC power cycling. Therefore, the root difference of the failure modes and lifetime of IGBT power modules between DC and PWM power cycling is the concern in this paper, based on the finite element simulation. For stimulating the PWM power cycling with high accuracy and fast speed, an IPWM power cycling is proposed and verified by a simple model. Then an electro-thermo-mechanical coupled model of a single chip is established for comparison. Mainly focus on the current distribution, temperature distribution and stress distribution. The current distribution comparison results show no difference while a higher temperature gradient is shown in PWM power cycling due to the additional switching losses. However, the stress distribution results show chip solder layer is still the main failure mechanism both in DC and IPWM power cycling. Therefore, a conclusion can be obtained that there is no difference in failure mechanism and lifetime between DC and PWM power cycling. And the same bond wire failure and similar lifetime of DC and PWM power cycling tests further verify this conclusion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
