Abstract
Vapour phase epitaxial layers of GaAs with good control of purity have been grown on lens shaped surfaces about the (001). Morphological aspects for different misorientations from the singular surface in various directions and angles do not exhibit large differences except for the (001) facet (singular surface) which always appears. Doping levels and growth rates also show an important discontinuity for the exact (001) facet which presents a lower growth rate and a higer doping level. Differences in the growth rates have been observed for [110] and [1 1 0] misorientation directions. Kinetic and nucleation limitations could explain such differences which may exist for other low index planes.
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