Abstract
Due to their high surface area, monoatomic wall thickness, electronic structure (band gap, van Hove singularities) and properties (high mobility, ambipolar transport), single-walled carbon nanotubes (SWNTs) stand as a promising active material for chemical sensors. In a sensor context, they however suffer from lack of selectivity. For the same reasons that they are highly sensitive to analytes, they will be affected by their environment: interference from ambient gases (i.e. O2 / H2O redox couple) are to be expected [1,2], and vicinal charges and dipoles [3,4] will change the local electrostatics felt by the SWNTs. The dielectric environment being an integral part of the field-effect transistor (FET) stack, we sought to understand its effect on the transfer characteristics of devices with a carbon nanotube network as the active channel component.
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