Abstract
The increasing constraints in the miniaturization of modern electronic devices is driving the search for new high-k dielectric materials. Rare-earth transition metal oxides are very interesting because of the large values of dielectric constant observed in bulk samples. Here, we report on a comparison among the dielectric properties of yttrium copper titanate (YCTO) thin films and those of commonly used dielectrics such as SiO2 and MgO, grown in similar device structures. The YCTO permittivity was found to depend strongly on the oxygen pressure during deposition and can reach values even higher than those reported in bulk YCTO with good performances in terms of losses.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
