Abstract
Using the transverse Ising model within the framework of the mean-field theory, we investigate a ferroelectric bilayer film with the surface transition layer within each constituent slab and an antiferroelectric interfacial coupling between two slabs. The combined influence of the surface transition layer and antiferroelectric interfacial coupling on the dielectric susceptibility of a bilayer film is discussed in detail. The results show that the surface transition layer plays a crucial role in dielectric susceptibility of a bilayer film.
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