Abstract
This paper presents the frequency dielectric measurements of the N type ternary semiconductor compound of Cu5In9Se16 in order to analyze the mechanisms of charge transport and dielectric losses. The universal laws of Elliot and Jonscher are used to identify the conduction mechanisms. The experimental data agree with the theoretical models of hopping and polaron tunneling. The values of some parameters related to the dominant conduction mechanisms are estimated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
