Abstract
Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
