Dielectric relaxation mechanism of single crystal and polycrystal bismuth germanate

Abstract

We report the results of investigation on the mechanism of dark conductivity and dielectric relaxation of Bi12GeO20 single crystals and dense ceramics. Alternating current electric characterization was performed in the temperature interval from 30 °C up to 730 °C and frequencies from 1 Hz to 13 MHz. The samples presented ohmic behavior even at high temperatures, for applied potentials up to 2.2 V. The electric conductivity of single crystals was thermally activated, with potential barriers changing from 0.75±0.05 eV to 1.4±0.2 eV at 500 °C. The same conduction mechanisms were observed for ceramic samples, with activation energies of 0.9±0.1 eV and 1.5±0.1 eV for charge transport through grains and grain boundaries, respectively. These energy values were related to defects arising from substitutional Bi3++h+ in Ge4+ sites. In the ceramic samples, the higher resistivity of the grain interfaces leads to a Maxwell–Wagner polarization of the grain boundaries due to local charge rearrangement. As a result, the overall permittivity of ceramics was higher than that observed for single crystals at frequencies corresponding to the grain boundary response.