Dielectric relaxation in pulsed laser ablated CaCu3Ti4O12 thin film

Abstract

The dielectric constant and ac conductivity of CaCu3Ti4O12 thin films deposited on platinized silicon substrate using pulsed laser deposition technique have been measured in the metal-insulator- metal configuration over wide temperature (80–500K) and frequency (100Hz–1MHZ) ranges. The crystallographic structure and the phase purity of the deposited films were investigated using x-ray diffraction and micro-Raman spectroscopy. The dielectric dispersion data have been fitted to Debye-type relaxation with a distribution of relaxation times and an asymmetric distribution of relaxation was observed which increases with increase in ωτ.