Abstract
The effects of (Bi0.5K0.5)2+ content on the microstructures, dielectric properties and energy storage properties of Ba1-x(Bi0.5K0.5)xTi0.85Zr0.15O3 (x = 0, 0.02, 0.04, 0.06, 0.08, 0.1; BZTO) ceramics were systematically investigated. The dielectric properties of the doped BZTO (x = 0.02–0.1) ceramics as a function of temperature exhibit a wide peak, indicating a diffuse phase transition in doped BZTO ceramics. The diffuse phase transition leads to the good dielectric stability for doped BZTO (x = 0.02–0.1) ceramics over a wide temperature range (−200 °C–120 °C). Also, the slim polarization electric field (P-E) loops were observed in the x = 0.06 and x = 0.08 samples, showing lower remnant polarization (Pr) than that of pure BZTO ceramic obviously. The x = 0.06 sample exhibits the highest energy storage density of 0.90 J/cm3 together with a high energy storage efficiency of 90.4% at 30 kV/cm.
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