Dielectric relaxation and transition of porous silicon

Abstract

Dielectric impedance measurements of porous silicon within the frequency range of 50 Hz–1.0 MHz and temperature range of 298–798 K revealed three semicircles in a Cole–Cole plot when the temperature is raised to 773 K; they are thought to correspond to contributions from the grain interior, grain boundary, and electrode/film interface, respectively. The enhancement in conductivity by heating follows an Arrhenius law with an activation energy transition from 0.07 to 0.79 eV at ∼565 K, which originates from band tail hopping that occurs around the Fermi edge. At a critical temperature, a high degree of dispersion in the real and imaginary parts of the permittivity also occurs at low frequencies. This dispersion behavior is interpreted as a combination of electron-lattice polarization associated to the band tail hopping and the crystal field weakening due to thermal expansion.